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Development of Materials Science in Research and Education

31 August - 4 September, 2015

Full Program | Monday | Tuesday | Wednesday | Thursday | Friday

 
Thursday, 3 September 2015

08:00 - 8:40 Breakfast

09:00 - 10:00 Thursday Session I
Location: Lecture Hall
chairperson: Ĺ. Dĺháň
09:00 - 09:20 Martin Klejch, Karel Bartoš, Jan Polák, Jan Kubát, and Jindřich Houžvička
New method to grow large core free YAG crystals
09:20 - 09:40 Michal Horký, Jan Hulva, Jonáš Gloss, Peter Varga, Michael Schmid, and Michal Urbánek
Ion-beam-induced magnetic transformation of metastable fcc iron-nickel films grown on Si(100) substrates
09:40 - 10:00 Robert Král, Jan Pejchal, Aleš Bystřický, Karel Nitsch, and Martin Nikl
Development of micro-pulling-down method for growth of oxide and halide single crystals

10:00 - 10:30 Coffee break
Location: Hotel Langue

10:30 - 12:30 Thursday Session II
Location: Lecture Hall
chairperson: K. Nitsch
10:30 - 10:50 Jozef Dobrovodský, Robert Riedlmajer, and Lucia Bónová
The current state of new ion beam and plasma facility for material synthesis, modification and analysis
10:50 - 11:10 Kateřina Dragounová, Tibor Ižák, Zdeněk Potůček, Zdeněk Bryknar, and Štěpán Potocký
Photoluminescence and Raman analysis of CVD diamond films
11:10 - 11:30 Petra Zemenová, Antonín Cihlář, and Karel Nitsch
Study of glass by thermal analyses
11:30 - 11:50 Vladimír Kucek, Čestmír Drašar, Jiří Navrátil, Tomáš Plecháček, and Ludvík Beneš
Thermoelectric properties of Ni-doped CuInTe2
11:50 - 12:10 Jan Šik
Benefits of cooperation of industrial and university research and development of semiconductor materials and devices
12:10 - 12:30 Jan Kulveit, Pavel Demo, and Alexey Sveshnikov
Nucleation on surface with heterogeneous surface energy in Ising model

12:40 - 13:20 Lunch
Location: Lunchroom

19:00 - 22:30 Farewell party
Location: Lecture Hall